Free Pdf Download Of Semiconductor Optoelectronic Devices 2nd Edition Pallab Bhattacharya 39

It has been shown that the ferroelectric films of NdFeO3 (NFO) and Pb(Zr,Ti)O3 (PZT) have large strain and these films exhibit domain growth in perpendicular direction, when deposited on Si substrates and subjected to a compressive strain. Based on these results, we have developed a method of forming NVM devices on Si, where ferroelectric thin films are formed on substrate that are under large compressive strain. Using this method, we can suppress the formation of domains due to the large compressive strain from the substrate, and therefore, the depolarization field is diminished. In this study, we report ferroelectric non-volatile random access memory devices with Ti-Nb-O, NFO and PZT ferroelectric thin films. The ferroelectric thin films of these materials were deposited onto Si substrates that are subjected to tensile strain by using the Strained Si Substrate (SSS) technique. We show that the non-volatile random access memory devices have a high yield and a high memory density for the presented ferroelectric materials. The devices that are based on PZT and NFO ferroelectric thin films show an excellent switching behavior. These results show that ferroelectric non-volatile random access memory devices can be manufactured on Si wafers, which are subjected to large compressive strains. This study will result in ferroelectric non-volatile random access memory devices with a higher yield and a high density.

3. “Ferroelectric thin films of NdFeO3 on Si substrates under large compressive strain for non-volatile random access memory devices”, in proceedings of 12th International Conference on Integrated Ferroelectrics, October 4-9, 2009, Saint Petersburg, Russia. 4.

2. “Ferroelectric thin films with large compressive strain and application to nonvolatile random access memory devices with Ti-Nb-O, NFO and PZT ferroelectric thin films”, in proceedings of 23rd International Conference on Microelectronic and Nanotechnology, May 24-27, 2013, Seoul, Korea. 2.

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